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| BCP869 BC869 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 500 -2 -32 mW (Tamb=25) A V 2. COLLECTOR 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -65 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions MIN -32 -20 -5 -0.1 -0.1 50 100 60 100 160 MAX UNIT V V V A A Ic=-0.1mA, IE=0 IC= -1mA , IB=0 IE=-0.1mA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 VCE=-10V, IC= -5mA VCE=-1V, IC= -500mA VCE=-1V, IC= -1A VCE=-1V, IC= -500mA IC=-1A, IB= -100mA VCE=-5V, IC=-10mA DC current gain BC869-16 BC869-25 Collector-emitter saturation voltage hFE(1) 375 hFE(2) VCE(sat) 250 375 0.5 V Transition frequency fT f = 100MHz 40 MHz DEVICE MARKING BC869=CEC BC869-16=CGC BC869-25=CHC WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com |
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